Soitec: development agreement with Resonac

(CercleFinance.com) - Soitec has signed an agreement with Resonac Corporation to develop 200 mm SmartSiC silicon carbide (SiC) wafers using Resonac's substrates and epitaxy processes.


This is a major milestone for the deployment of Soitec's high-efficiency silicon carbide technology in Japan and other international markets, the semiconductor materials group says.

The combination of Soitec's and Resonac's respective technologies and products should enhance the efficiency and productivity of SiC, accelerating its adoption for industrial applications and electric vehicles.


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