STMicroelectronics: cooperating with CEA for 'GaN-on-Si'

(CercleFinance.com) - STMicroelectronics and the CEA (French Atomic Energy and Alternative Energy Commission (CEA,Commissariat) today announce their cooperation with a view to industrialising " Gallium Nitride)-on-Silicon" ("GaN-on-Si") technologies for power-switching devices.


"This power GaN-on-Si technology will enable ST to address high-efficiency, high-power applications, including automotive on-board chargers for hybrid and electric vehicles, wireless charging, and servers," STMicroelectronics said in a statement.

The collaboration focuses on developing and qualifying advanced power GaN-on-Silicon diode and transistor architectures on 200mm wafers, a market that the research firm IHS Markit estimates to grow at a CAGR of more than 20 percent from 2019 to 2024, according to data provided by STMicroelectronics. The engineering samples are expected to be validated in 2019.


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